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| Fuji Discrete Package IGBT n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Minimized Internal Stray Inductance n Outline Drawing n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage ( Tc=25C) Symbols VCES VGES DC Tc= 25C IC 25 Collector Current DC Tc=100C IC 100 1ms Tc= 25C IC PULSE IGBT Max. Power Dissipation PC FWD Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Mounting Screw Torque n Equivalent Circuit Ratings 1200 20 38 25 114 310 145 +150 -40 +150 70 Units V V A W W C C Nm * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=20V IC=25mA VGE=15V IC=25A VGE=0V VCE=10V f=1MHz VCC=600V IC=25A VGE=15V RG=82 VCC=600V IC=25A VGE=+15V RG=8 IF=25A VGE=0V IF=25A, VGE=-10V, di/dt=100A/s Min. Typ. Max. 1.0 20 8.5 3.5 Units mA A V pF 1.2 0.6 1.5 0.5 0.16 0.11 0.30 0.5 3.0 350 5.5 2500 500 200 Turn-on Time Switching Time Turn-off Time Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time s s V ns * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Test Conditions IGBT Diode Min. Typ. Max. 0.40 0.86 Units C/W Collector Current vs. Collector-Emitter Voltage 60 T j= 2 5 C 60 Collector Current vs. Collector-Emitter Voltage T j= 1 2 5 C V GE = 2 0 V , 1 5 V 50 12V V GE = 2 0 V , 1 5 V [A] 40 10V 30 [A] 12V 40 10V C Collector Current : I 20 Collector Current : I C 20 10 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V] 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V] 8V Collector-Emitter Voltage vs. Gate-Emitter Voltage 12 T j= 2 5 C 12 Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 1 2 5 C [V] 10 [V] CE 10 CE Collector-Emitter Voltage : V 6 IC = 4 50A 25A 2 12.5A Collector-Emitter Voltage : V 8 8 6 4 IC = 50A 25A 2 12.5A 0 0 5 10 15 20 25 0 0 5 10 15 20 25 Gate-Emitter Voltage : V GE [V] Gate-Emitter Voltage : V GE [V] Switching Time vs. Collector Current V CC = 6 0 0 V , R G=8.2 , V GE = 1 5 V , T j= 2 5 C Switching Time vs. Collector Current V CC = 6 0 0 V , R G =8.2 , V GE= 1 5 V , T j= 1 2 5 C , t r, t off , t f [nsec] , t r, t off , t f [nsec] 1000 1000 t off tf t on tr t off t on tf tr on Switching Time : t Switching Time : t on 100 100 10 0 10 20 30 40 10 0 10 20 30 40 50 Collector Current : I C [A] Collector Current : I C [A] Switching Time vs. R G V CC =600V, I C = 2 5 A , V GE = 1 5 V , T j= 2 5 C Switching Time vs. R G V CC =600V, I C = 2 5 A , V GE = 1 5 V , T j= 1 2 5 C , t r, t off , t f [nsec] t off 1000 t on , t r, t off , t f [nsec] t off 1000 t on on on tr tf 100 tf tr Switching Time : t Switching Time : t 100 100 10 0 20 40 60 80 0 20 40 60 80 100 G a t e R e s i s t a n c e : R G [ ] G a t e R e s i s t a n c e : R G [ ] Capacitance vs. Collector-Emitter Voltage T j= 2 5 C 10000 1000 Dynamic Input Characteristics T j= 2 5 C 25 VCC= 400V 600V 800V [V] C res C ies [pF] CE Collector-Emitter Voltage : V 1000 600 15 Capacitance : C C oes 100 400 10 C res 200 5 10 0 5 10 15 20 25 30 35 0 0 50 100 150 200 250 300 350 G a t e C h a r g e : Q G [nQ] 400 0 450 Reverse Recovery Time vs. Forward Current V R= 2 0 0 V , -di Reverse Recovery Current vs. Forward Current V R= 2 0 0 V , -di 300 / dt= 1 0 0 A / s e c 125C 16 14 / dt = 1 0 0 A / s e c [nsec] [A] 12 10 8 125C rr 200 Reverse Recovery Time : t Reverse Recovery Current : I rr 25C 100 25C 6 4 2 0 0 10 20 30 40 50 0 0 10 20 30 40 50 Forward Current : I F [A] Forward Current : I F [A] Gate-Emitter Voltage : V oes GE [V] C ies 800 20 Reverse Biased Safe Operating Area + V GE= 1 5 V , - V GE< 1 5 V , T j< 1 2 5 C , R G > 8.2 60 300 Typical Short Circuit Capability V CC = 8 0 0 V , R G =8.2 , T j= 1 2 5 C 60 50 250 [A] t SC 200 I SC 40 [A] C Short Circuit Current : I 30 150 20 100 20 10 50 0 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 [V] Gate Voltage : V GE Collector-Emitter Voltage : V CE [V] 0 25 Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current 60 T j= 1 2 5 C 2 5 C 1000 V R = 2 0 0 V , I F = 2 5 A , T j= 1 2 5 C -di / dt 25 [nsec] 50 I rr [A] Forward Current : I 600 15 30 400 10 20 t rr 200 5 10 0 0,0 0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0 50 100 -di 150 / dt 200 250 0 300 Forward Voltage : V F [V] [A/sec] Transient Thermal Resistance Thermal Resistance : Rth(j-c) [C/W] 10 1 10 0 FWD IGBT 10 -1 10 -4 10 -2 10 -3 10 -2 10 -1 10 0 Pulse Width : P W [sec] Reverse Recovery Current : I 40 Reverse Recovery Time : t F rr rr [A] 800 20 Short Circuit Time : t Collector Current : I SC 40 SC [s] Switching losses (Eon, Eoff vs. IC) IC [A] Test Circuit Switching waveforms P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com |
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